Effects of dynamic disorder on thermoelectric transport in soft materials

Author:

Birch Shantonio W.1ORCID,Pipe Kevin P.2ORCID

Affiliation:

1. Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

Abstract

A model is developed that accounts for the effects of thermal disorder (both static and dynamic) in predicting the thermoelectric (TE) performance of weakly bonded semiconductors. With dynamic disorder included, the model is found to fit well with experimental results found in the literature for the density-of-states and the energy-dependent carrier mobility, which are key for assessing TE properties. The model is then used to analyze the concentration-dependent TE properties of the prototypical small molecular semiconductor rubrene. At low (e.g., intrinsic) carrier concentrations, where Fermi level pinning occurs, dynamic disorder is found to reduce electrical conductivity ([Formula: see text]), Seebeck coefficient ([Formula: see text]), and thermoelectric power factor ([Formula: see text]) to values that are much lower than those traditionally predicted by static disorder models. As carrier concentration ([Formula: see text]) increases, [Formula: see text] exhibits nonlinear behavior, increasing well above the conventional [Formula: see text] vs [Formula: see text] relationship before reaching a peak value ([Formula: see text]). A critical carrier concentration ([Formula: see text] molar ratio) is observed near [Formula: see text] at which thermoelectric transport transitions from trap-limited behavior at low concentrations to conventional band behavior at high concentrations. Above this value, [Formula: see text] and [Formula: see text] are reduced compared to the perfect crystal and static-only conditions, causing a drop in the maximum [Formula: see text] by factors of 3 and 2.3, respectively. This [Formula: see text] reduction, while not as large as the [Formula: see text] reduction that occurs for low carrier concentration, is found to occur in a high concentration regime ([Formula: see text]) that contains the [Formula: see text] maximum and has remained inaccessible to experimentalists due to dopant limitations that are worsened in the presence of dynamic disorder.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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