Low‐temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109915
Reference10 articles.
1. Generation-Recombination Current in the Emitter-Base Junction of AlGaAs/GaAs HBTs
2. Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistors
3. Suppression of Be diffusion in molecular-beam epitaxy AlGaAs by the incorporation of In for heterojunction bipolar transistor applications
4. Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs
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1. Flow Rate Modulated Vapor Epitaxy;Reference Module in Materials Science and Materials Engineering;2016
2. Photoluminescence investigation of Be-doped Npn AlGaAs/GaAs heterojunction bipolar transistor structures;Physica E: Low-dimensional Systems and Nanostructures;2005-12
3. Flow Rate Modulated Vapor Epitaxy;Encyclopedia of Materials: Science and Technology;2001
4. Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy;Journal of Crystal Growth;1999-05
5. Negative VBE shift due to base dopant outdiffusion in DHBT;Solid-State Electronics;1996-09
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