Design and research of a novel structure for extended interaction oscillators

Abstract

To improve the bandwidth and output of an extended interaction oscillator (EIO), this article proposes a new structure and tests its S parameters. Through simulation analysis and theoretical calculations, it is verified that the structure cannot only increase the bandwidth of the device but also suppress the influence of weak-coupling characteristics of the grating and increases the power capacity of the device. The optimized structure was analyzed by particle-in-cell simulations. The results show that the X-EIO structure has a wide electrical tuning range of 800 MHz under the condition that the effective output is not less than 150 W. The dual-coupling hole of this structure cannot only obtain the same frequency and the same power output synchronously but also has higher efficiency and greater power than the traditional single-hole output. With oxygen-free copper as the background material, at 20.8 kV, 1 A electron beam injection, both coupling holes can obtain a power of more than 2.6 kW, and the highest output efficiency reaches 12.67%. The slow-wave structure has been assembled and tested, and the distribution result of its S parameter is similar to the simulation result, which can achieve broadband adjustable output.