Physical and chemical characterization of combinatorial metal gate electrode Ta–C–N library film
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3428788
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1. High-throughput methodology for the realization of high-entropy sub-nm equivalent-oxide-thickness high-dielectric-constant Ba(Ti,Zr,Ta,Hf,Mo)O3 film-based metal-oxide-semiconductor-related devices;Materials Today Physics;2023-09
2. Tuning structure and mechanical properties of Ta-C coatings by N-alloying and vacancy population;Scientific Reports;2018-12
3. Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials;Journal of Applied Physics;2013-06-21
4. Combinatorial screening of work functions in Ta–C–N/HfO2/Si advanced gate stacks;Scripta Materialia;2013-03
5. Tribological properties of Ta-C-N and Ta-N thin films;Materialwissenschaft und Werkstofftechnik;2013-01
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