Three‐dimensional Monte Carlo calculation of Ga+ion penetration in ana‐Se75Ge25thin film
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360601
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5. Germanium selenide: A resist for low‐energy ion beam lithography
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1. Enhanced conduction in CdSe nanowires on 200 keV phosphorous negative ion implantation;Materials Research Bulletin;2018-12
2. Ion beam irradiation of nanostructures – A 3D Monte Carlo simulation code;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-10
3. Amorphous-Si Transmission Gratings Prepared by Ga+-Focused-Ion-Beam Milling and Their Polarization Characteristics;Japanese Journal of Applied Physics;2001-08-15
4. Sub-0.1 µm Patterning Characteristics of Inorganic Thin Films by Focused-Ion-Beam Lithography;Japanese Journal of Applied Physics;1998-12-30
5. Dry-etching development characteristics of Se[sub 75]Ge[sub 25] resist for focused-ion-beam lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-07
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