Electronic and optical properties of the (FeOs)Si2 ternaries
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1408907
Reference16 articles.
1. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
2. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region
3. Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si
4. Electronic and optical properties of isostructuralβ−FeSi2andOsSi2
5. The Crystal Structure of OsSi2.
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1. Structural stability and electronic properties of 2D alkaline-earth metal silicides, germanides, and stannides;Japanese Journal of Applied Physics;2020-01-17
2. Fabrication and characterization of novel Fe(Os)Si2 semiconductor;Physics Procedia;2011
3. Microstructual and optical properties of novel Fe1-xOsxSi2semiconducting alloys;Journal of Physics: Conference Series;2009-03-01
4. Effects of morphology on the electronic and photoluminescence properties of hydrogenated silicon nanowires;Journal of Applied Physics;2005-09
5. Electronic properties of semiconducting silicides: fundamentals and recent predictions;Thin Solid Films;2004-08
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