Minority‐carrier lifetime reduction in the initial degradation of long‐life AlxGa1−xAs‐GaAs lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89268
Reference7 articles.
1. Initial degradation mode of long‐life (GaAl)As‐GaAs lasers
2. Degradation of CW GaAs double-heterojunction lasers at 300 K
3. Degradation mechanism of (Al · Ga)As double‐heterostructure laser diodes
4. Continuous operation of GaAs–Ga1 −xAlxAs double‐heterostructure lasers with 30 °C half‐lives exceeding 1000 h
5. GaAs lasers with consistently low degradation rates at room temperature
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1. Calculation of the homogeneous degradation of injection laser parameters from initial degradation rates;IEEE Journal of Quantum Electronics;1978-11
2. Suppression of light feedback from an optical fiber into a diode laser;Optics Communications;1978-09
3. High-reflectivity cavity mirrors for high-performance (GaAl) As diode lasers;IEEE Journal of Quantum Electronics;1978-08
4. High-quality broad-band optical communication by time-division multiplexed pulse analog modulation: Nonlineary in diode lasers;IEEE Journal of Quantum Electronics;1978-05
5. Microscale degradation in (GaAl)As double‐heterostructure diode lasers;Applied Physics Letters;1977-11
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