Photoluminescence study on heavily donor and acceptor impurity doped GaAs layers grown by molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3122522
Reference16 articles.
1. Properties of Gallium Arsenide, 3rd ed., edited by M. R. Brozel and G. E. Stillman (INSPEC, London, 1996), p. 271.
2. Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center
3. Radiative transitions induced in gallium arsenide by modest heat treatment
4. Photoluminescence studies of defects and impurities in annealed GaAs
5. Characteristics of Heavily Si-Doped GaAs grown on (111)A Oriented Substrate by Molecular Beam Epitaxy as Compared with (100) growth
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1. Low temperature photoluminescence study of GaAs defect states*;Chinese Physics B;2020-01-01
2. Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures;Journal of Materials Chemistry C;2018
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