Comparison of the evolution of internal bias field of doped hafnia ferroelectric capacitors for the field-cycling reliability
Author:
Affiliation:
1. Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung, Gyeonggi-do, 15073, South Korea
Funder
National Research Foundation of Korea
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0026136
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