Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices-Reference-Cited by-同舟云学术

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Characterization of magnetron sputtering deposited thin films of TiN for use as a metal electrode on TiN/SiO2/Si metal–oxide–semiconductor devices

Published:2000-12-15 Issue:12 Volume:88 Page:7192-7196
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Evangelou E. K.,Konofaos N.,Aslanoglou X. A.,Dimitriadis C. A.,Patsalas P.,Logothetidis S.,Kokkoris M.,Kossionides E.,Vlastou R.,Groetschel R.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1322068

Reference9 articles.

1. Properties and microelectronic applications of thin films of refractory metal nitrides

2. Schottky barrier contacts of titanium nitride on n‐type silicon

3. Characteristics of TiNx/n-Si Schottky diodes deposited by reactive magnetron sputtering

4. New approach in the monitoring and characterization of titanium nitride thin films

5. Heavy ion RBS characterization of multilayer coatings deposited through the sol-gel technique

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