Charge trapping and interface state generation in metal‐oxide‐semiconductor capacitors due to Fowler–Nordheim tunneling injection at low temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345082
Reference14 articles.
1. Hole traps in silicon dioxide
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3. Photoinjection Studies of Charge Distributions in Oxides of MOS Structures
4. High‐field and current‐induced positive charge in thermal SiO2layers
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1. OXIDE WEAROUT, BREAKDOWN, AND RELIABILITY;International Journal of High Speed Electronics and Systems;2001-09
2. Reliability Aspects of Cryogenic Silicon Technologies;Low Temperature Electronics;2001
3. Interface trap generation by FN injection under dynamic oxide field stress;IEEE Transactions on Electron Devices;1998
4. Electrical Characteristics of Postoxidation Annealed Very Thin SiO2 Films: Potential Benefits of Rapid Thermal Processing;Journal of The Electrochemical Society;1996-01-01
5. The no-thermal activation of the defect generation mechanism in a MOS structure;Journal of Non-Crystalline Solids;1995-07
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