Gd and Sm interfaces with Hg1−xCdxTe(110) and a general model of rare‐earth/Hg1−xCdxTe(110) interface formation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351787
Reference24 articles.
1. The bonding properties of mercury–cadmium telluride
2. Ytterbium monolayer diffusion barriers at Hg1−xCdxTe/Al junctions
3. Diffusion barriers at mercury–cadmium–telluride/metal interfaces: The case of Hg1−xCdxTe(110)/Yb/Al
4. Yb diffusion barriers at Hg1−xCdxTe interfaces with Al, In, and Cr
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemical bonding and electronic properties of Se‐rich ZnSe–GaAs(001) interfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1996-11
2. Interfacial chemical bonds, reactions, and band alignment in ZnSe/GaAs(001) heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-07
3. Low Schottky barrier height contacts ton‐CdTe using rare‐earth metals;Journal of Applied Physics;1996-06
4. Extended synchrotron X-ray reflectivity study of a Sm-based layer buried into CdTe(001);Surface Science;1995-04
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