Growth of thin single crystal NiSi2films on Si surfaces, a field ion microscope study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96114
Reference11 articles.
1. Chemical bonding and Schottky barrier formation at transition metal–silicon interfaces
2. Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures
3. Theoretical models of Schottky barriers
4. The structure and properties of metal-semiconductor interfaces
5. Field ion microscopy, field ionization and field evaporation
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1. Perimeter and bulk recombination currents in GaAs homojunction diodes and heterojunction bipolar transistors after surface processing;Solid-State Electronics;1997-03
2. Evaluation of Ultrathin Si Growth Layer on W, Mo, and Ta Surfaces with In Situ Field Emission and Field Ion Microscopies;Japanese Journal of Applied Physics;1995-10-15
3. Room‐temperature continuous wave lasing characteristics of a GaAs vertical cavity surface‐emitting laser;Applied Physics Letters;1989-07-17
4. Studies of solid surfaces at atomic resolution;Surface Science Reports;1988-03
5. Growth of well ordered Rh overlayers on Si surfaces: A field ion microscope study;Surface Science;1987-01
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