Chirality-induced spin splitting in 1D InSeI

Author:

Zhao Shu123,Hu Jiaming23ORCID,Zhu Ziye23ORCID,Yao Xiaoping23,Li Wenbin23ORCID

Affiliation:

1. School of Materials Science and Engineering, Zhejiang University 1 , Hangzhou 310027, China

2. Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University 2 , Hangzhou 310030, China

3. Institute of Advanced Technology, Westlake Institute for Advanced Study 3 , Hangzhou 310024, China

Abstract

Spin–orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of spin polarization. Here, we use first-principles calculations to investigate the electronic states of chiral one-dimensional (1D) semiconductor InSeI, which has two enantiomorphic configurations with left- and right-handedness. We find that opposite spin states exist in the left- and right-handed 1D InSeI with significant spin splitting and spin-momentum collinear locking. Although the spin states at the conduction band minimum (CBM) and valence band maximum of 1D InSeI are both nearly degenerate, a direct-to-indirect bandgap transition occurs when a moderate tensile strain (∼4%) is applied along the 1D chain direction, leading to a sizable spin splitting (∼0.11 eV) at the CBM. These findings indicate that 1D InSeI is a promising material for chiral spintronics.

Funder

National Natural Science Foundation of China

Research Center for Industries of the Future

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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