Tunnel junctions with AlN barriers and FeTaN electrodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1356714
Reference9 articles.
1. Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)
2. Ferromagnetic–insulator–ferromagnetic tunneling: Spin-dependent tunneling and large magnetoresistance in trilayer junctions (invited)
3. Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited)
4. Low resistance spin-dependent tunnel junctions deposited with a vacuum break and radio frequency plasma oxidized
5. Magnetic properties and structure of a new multilayer [FeTaN/TaN]nfor recording heads
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1. Essential Characteristics of Memristors for Neuromorphic Computing;Advanced Electronic Materials;2022-10-25
2. Quantum transport of spin-polarized carriers in quasi paramagnetic quantum wires: Green’s function formalism;The European Physical Journal B;2009-04-18
3. Chapter Six Magnetic Microelectromechanical Systems: MagMEMS;Handbook of Magnetic Materials;2007
4. Chapter One Spin-Dependent Tunneling in Magnetic Junctions;Handbook of Magnetic Materials;2007
5. Chapter 6 Spin transport in magnetic multilayers and tunnel junctions;Contemporary Concepts of Condensed Matter Science;2006
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