Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3010303
Reference31 articles.
1. Demonstration of an n-channel inversion mode GaAs MISFET
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3. The advanced unified defect model for Schottky barrier formation
4. Dangling bonds and Schottky barriers
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5. In$_{0.53}$Ga$_{0.47}$As N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Shallow Metallic Source and Drain Extensions and Offset N$^{+}$ Doped Regions for Leakage Suppression;Japanese Journal of Applied Physics;2012-02-20
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