Effect of post‐oxidation anneal on ultrathin SiO2gate oxides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97465
Reference19 articles.
1. Generalized guide for MOSFET miniaturization
2. A Two‐Step Oxidation Process to Improve the Electrical Breakdown Properties of Thin Oxides
3. Electrical Properties of Post‐annealed Thin SiO2 Films
4. On the Kinetics of the Thermal Oxidation of Silicon: II . Some Theoretical Evaluations
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