Effect of implantation temperature on dislocation loop formation and origin of 1.55-μm photoluminescence from ion-beam-synthesized FeSi2 precipitates in silicon-Reference-Cited by-同舟云学术

Effect of implantation temperature on dislocation loop formation and origin of 1.55-μm photoluminescence from ion-beam-synthesized FeSi2 precipitates in silicon

Published:2003-07-07 Issue:1 Volume:83 Page:42-44
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gao Y.,Wong S. P.,Cheung W. Y.,Shao G.,Homewood K. P.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1590434

Reference9 articles.

1. Room‐temperature electroluminescence from Er‐doped crystalline Si

2. On the origin of the 1.5 μm luminescence in ion beam synthesized β‐FeSi2

3. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

4. Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si

5. An efficient room-temperature silicon-based light-emitting diode

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