Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3644960
Reference28 articles.
1. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's
2. Modeling statistical dopant fluctuations in MOS transistors
3. Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels
4. Where Do the Dopants Go?
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