Lower current operation of phase change memory cell with a thin TiO2 layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2841655
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1. RAPID REVERSIBLE LIGHT‐INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS
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4. Nitrogen-implanted Ge2Sb2Te5film used as multilevel storage media for phase change random access memory
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