Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1563293
Reference26 articles.
1. Emerging gallium nitride based devices
2. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
3. Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire
4. An optically pumped GaN–AlGaN vertical cavity surface emitting laser
5. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
Cited by 113 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thickness Description of Thick GaN Film Stack and Measurement of Al Percentage in AlGaN Alloy with KLA SpectraShape™ 10K;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13
2. Magnetron Sputter Deposition of Nanostructured AlN Thin Films;Applied Nano;2023-10-05
3. Absorption and photoemission of optically localized GaN nanowire array cathode;MRS Communications;2023-01-30
4. Photoabsorption and quantum efficiency of multi-diameter combined AlxGa1-xN nanostructure UV photodetectors;Solid State Communications;2022-12
5. Stimulated emission in heavily doped Al0.68Ga0.32N:Si structures with external cavity;Journal of Luminescence;2022-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3