Misfit Dislocations in Bicrystals of Epitaxially Grown Silicon on Boron‐Doped Silicon Substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1658146
Reference21 articles.
1. One-dimensional dislocations. I. Static theory
2. Crystal Interfaces. Part I. Semi‐Infinite Crystals
3. OBSERVATION OF MISFIT DISLOCATIONS IN GaAs–Ge HETEROJUNCTIONS
4. Reflection X-Ray Topography of GaAs Deposited on Ge
5. Comment on ``Slip in Epitaxial Ge–GaAs Combinations''
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