Fermi level pinning and Hf–Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1844611
Reference12 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
3. Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
4. Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal–oxide–semiconductor field-effect transistors for high-k-HfO2 dielectric
5. Metal-semiconductor contacts: electronic properties
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