Application of the Williams–Watts decay law toDXcenter capture and emission kinetics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100947
Reference20 articles.
1. On the carrier emission from donor-related centres in GaAs1-xPx and AlxGa1-xAs
2. Origin of the nonexponential thermal emission kinetics ofDXcenters in GaAlAs
3. Effect of the silicon doping concentration on the recombination kinetics ofDXcenters in Al0.35Ga0.65As
4. The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs
5. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
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