Gain dynamics of quantum dot devices for dual-state operation

Author:

Kaptan Y.1,Schmeckebier H.2,Herzog B.1,Arsenijević D.2,Kolarczik M.1,Mikhelashvili V.3,Owschimikow N.1,Eisenstein G.3,Bimberg D.2,Woggon U.1

Affiliation:

1. Institut für Optik und Atomare Physik, Technische Universität Berlin, Berlin, Germany

2. Institut für Festkörperphysik, Technische Universität Berlin, Berlin, Germany

3. Technion Institute of Technology, Faculty of Electrical Engineering, Haifa, Israel

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots;IEEE Journal of Selected Topics in Quantum Electronics;2019-11

2. Model of an Injection Semiconductor Quantum-Dot Laser;Radiophysics and Quantum Electronics;2018-04

3. Samples and Characterization;Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication;2016-10-22

4. Concept of Dual-Band Amplifiers;Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication;2016-10-22

5. Ultrafast gain recovery and large nonlinear optical response in submonolayer quantum dots;Physical Review B;2016-07-11

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