Bistable Switching in Metal‐Semiconductor Junctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654130
Reference3 articles.
1. Switching properties of thin Nio films
2. Reversible Electrical Switching Phenomena in Disordered Structures
3. SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONS
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Memory states in electroformed MIM diodes;International Journal of Electronics;1994-05
2. Metal-insulator-metal devices with carbonaceous current paths;International Journal of Electronics;1990-07
3. Bistable switching in electroformed metal–insulator–metal devices;Physica Status Solidi (a);1988-07-16
4. Some observations on the switching and memory phenomena in ZnTe-Si;Journal of Materials Science;1986-06
5. Fabrication and Characterization of Metal-Semiconductor Schottky Barrier Junctions;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984
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