Features of hydrogenated amorphous silicon films developed under an unexplored region of parameter space of radio-frequency plasma-enhanced chemical vapor deposition-Reference-Cited by-同舟云学术

Features of hydrogenated amorphous silicon films developed under an unexplored region of parameter space of radio-frequency plasma-enhanced chemical vapor deposition

Published:2000-04-24 Issue:17 Volume:76 Page:2340-2342
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hazra Sukti,Middya A. R.,Longeaud C.,Ray Swati

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126339

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5. Improvement in the properties ofa‐SiGe:H films: Roles of deposition rate and hydrogen dilution

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