Defect passivation by proton irradiation in ferromagnet-oxide-silicon junctions-Reference-Cited by-同舟云学术

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Defect passivation by proton irradiation in ferromagnet-oxide-silicon junctions

Published:2016-10-03 Issue:14 Volume:109 Page:142407
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tinkey Holly N.¹,Dery Hanan²³,Appelbaum Ian¹

Affiliation:

1. Department of Physics, Center for Nanophysics and Advanced Materials, U. Maryland, College Park, Maryland 20742, USA

2. Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA

3. Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627, USA

Funder

Division of Graduate Education (DGE)

Defense Threat Reduction Agency (DTRA)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4964344

Reference54 articles.

1. Electronic analog of the electro‐optic modulator

2. Spintronics: Fundamentals and applications

3. Spin transference and magnetoresistance amplification in a transistor

4. Semiconductor spintronics

5. Spin-based logic in semiconductors for reconfigurable large-scale circuits

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