Monte Carlo studies of band‐tail effects on the recombination kinetics in heavily doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344527
Reference13 articles.
1. Thomas-Fermi Approach to Impure Semiconductor Band Structure
2. Band tails in semiconductors
3. Energy-band distortion in highly doped silicon
4. Effective minority-carrier mobility in heavily doped silicon defined by trapping and energy-gap narrowing
5. Minority Carrier Transport in Heavily Doped Silicon: Fundamental Equations
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1. Band Tails and Cu–Zn Disorder in Cu2ZnSnS4 Solar Cells;ACS Applied Energy Materials;2020-07-20
2. Modelling of band tails and their effects on minority carrier transport in heavily doped silicon;Solid-State Electronics;1992-06
3. A two‐dimensional ensemble Monte Carlo simulation of hole transport in heavily doped smalln‐type emitters;Journal of Applied Physics;1992-02-15
4. Monte Carlo studies on hole mobility in heavily doped n-type silicon;Microelectronic Engineering;1991-10
5. Monte Carlo simulation of semiconductor devices;Computer Physics Communications;1991-08
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