Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1695591
Reference15 articles.
1. Room‐temperature continuous‐wave operation of an AlGaInP double heterostructure laser grown by atmospheric pressure metalorganic chemical vapor deposition
2. Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition
3. Room-temperature CW operation of AlGaInP double-heterostructure visible lasers
4. Study of tertiarybutylphosphine pyrolysis using a deuterated source
5. 1.55 μm multiquantum-well lasers with record performance obtained by atmospheric pressure MOVPE using organometallic phosphorus precursor
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1. High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL;Applied Physics Express;2014-09-01
2. Polarized spontaneous emission from an emitter in controlled nodal vacuum fluctuations near a single high reflector;Journal of the Optical Society of America B;2014-01-10
3. Strain compensation techniques for red AlGaInP-VECSELs: Performance comparison of epitaxial designs;Journal of Crystal Growth;2013-05
4. Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV;SPIE Proceedings;2012-06-01
5. Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs;SPIE Proceedings;2012-06-01
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