Saturation of the junction voltage in GaN-based laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4804384
Reference14 articles.
1. Electrical characterization of heterostructure lasers
2. Thermal characterization of GaN-based laser diodes by forward-voltage method
3. Saturation of the junction voltage in stripe‐geometry (AlGa)As double‐heterostructure junction lasers
4. Fermi level pinning and differential efficiency in GaInP quantum well laser diodes
5. Lasing-Induced Change in the Differential Resistance of Stripe Geometry Ga1-xAlxAs DH Lasers
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Redefinition the quasi-Fermi energy levels separation of electrons and holes inside and outside quantum wells of GaN based multi-quantum-well semiconductor laser diodes;Journal of Physics D: Applied Physics;2020-02-05
2. Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes;Applied Physics B;2018-02-09
3. Exciton recombination in lasing contributing an opposite abrupt change of the electrical behavior near threshold between GaN- and GaAs- multi-quantum-well laser diodes;Journal of Physics D: Applied Physics;2018-02-09
4. A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing;Materials;2017-04-30
5. Comparative study of the differential resistance of GaAs- and GaN-based laser diodes;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3