The Ga–As–Ge–Sn system: 800 °C liquidus isotherm and electrical properties of Ge–Sn‐doped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662632
Reference22 articles.
1. EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K
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1. Liquid-Phase Epitaxial Growth ofIn0.35Ga0.65Pon GaP Substrates from Sn-Rich Solutions;Japanese Journal of Applied Physics;1997-09-15
2. Evaluation of InAs solubility in the InAsSn system;Thin Solid Films;1991-03
3. LPE Growth of GaSb from Ga and Sn solutions;Journal of Crystal Growth;1987-01
4. Preparation of devices by liquid phase epitaxy with application to the achievement of a visible laser in GaAlAs;Journal of Applied Physics;1984-02
5. Compilation of calculated phase diagrams in multicomponent metallic systems using a thermodynamic approach;Bulletin of Alloy Phase Diagrams;1983-03
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