Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence-Reference-Cited by-同舟云学术

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Influence of cooling rate in planar thermally assisted magnetic random access memory: Improved writeability due to spin-transfer-torque influence

Published:2015-09-14 Issue:11 Volume:107 Page:112403
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chavent A.,Ducruet C.,Portemont C.,Creuzet C.,Vila L.,Alvarez-Hérault J.,Sousa R. C.,Prejbeanu I. L.,Dieny B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4930933

Reference13 articles.

1. Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions

2. Low-current blocking temperature writing of double barrier magnetic random access memory cells

3. Thermally assisted MRAMs: ultimate scalability and logic functionalities

4. Spin Transfer Torque Memory With Thermal Assist Mechanism: A Case Study

5. J. Alvarez-Hérault , “ Mémoire magnétique à écriture par courant polarisé en spin assistée thermiquement,” Ph.D. dissertation, Université de Grenoble, 2010.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetic Random Access Memories;Nanomagnetism: Applications and Perspectives;2017-03-24

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