Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage-Reference-Cited by-同舟云学术

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Development of theoretical approach for describing electronic properties of hetero-interface systems under applied bias voltage

Published:2017-02-28 Issue:8 Volume:146 Page:084706
ISSN:0021-9606
Container-title:The Journal of Chemical Physics
language:en
Short-container-title:J. Chem. Phys.

Author:

Iida Kenji¹^ORCID,Noda Masashi¹,Nobusada Katsuyuki¹

Affiliation:

1. Department of Theoretical and Computational Molecular Science, Institute for Molecular Science, Okazaki 444-8585, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Publisher

AIP Publishing

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference79 articles.

1. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons, 2006).

2. Electric field control of the LaAlO3/SrTiO3 interface ground state

3. Rewritable nanoscale oxide photodetector

4. Very Large Capacitance Enhancement in a Two-Dimensional Electron System

5. Visible-light-enhanced gating effect at the LaAlO3/SrTiO3 interface

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