Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors-Reference-Cited by-同舟云学术

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Density of defect states retrieved from the hysteretic gate transfer characteristics of monolayer MoS2 field effect transistors

Published:2019-01 Issue:1 Volume:9 Page:015230
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Xu Qiang¹^ORCID,Sun Yingri¹,Yang Peng²,Dan Yaping¹^ORCID

Affiliation:

1. University of Michigan - Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China

2. State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5082829

Reference32 articles.

1. Dramatic Reduction of Surface Recombination by in Situ Surface Passivation of Silicon Nanowires

2. Near-unity photoluminescence quantum yield in MoS2

3. Dopant profiling and surface analysis of silicon nanowires using capacitance–voltage measurements

4. Optoelectronically probing the density of nanowire surface trap states to the single state limit

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1. Microscale spectroscopic mapping of defect evolution and filling in large-area growth of monolayer MoS2;Applied Surface Science;2023-11

2. Enhanced Emission of Molybdenum Disulfide by Organic–Inorganic Hybrid Heterojunctions;Precision Chemistry;2023-07-21

3. Tunable Electron Transport in Defect-Engineered PdSe₂;Chemistry of Materials;2023-06-25

4. Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge ₄ Se ₉;Advanced Materials;2022-09-09

5. Unraveling the Mechanism of the 150-Fold Photocurrent Enhancement in Plasma-Treated 2D TMDs;ACS Applied Materials & Interfaces;2022-07-18

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