Theoretical calculations of the carrier induced refractive index change in tensile-strained InGaAsP for use in 1550 nm semiconductor optical amplifiers-Reference-Cited by-同舟云学术

Theoretical calculations of the carrier induced refractive index change in tensile-strained InGaAsP for use in 1550 nm semiconductor optical amplifiers

Published:2008-11-03 Issue:18 Volume:93 Page:181111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Connelly Michael J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3021393

Reference7 articles.

1. Cross-polarization modulation in semiconductor optical amplifiers

2. Signal-induced birefringence and dichroism in a tensile-strained bulk semiconductor optical amplifier and its application to wavelength conversion

3. A Mueller-Matrix Formalism for Modeling Polarization Azimuth and Ellipticity Angle in Semiconductor Optical Amplifiers in a Pump–Probe Scheme

4. Polarization-Insensitive SOAs Using Strained Bulk Active Regions

5. Wide-Band Steady-State Numerical Model and Parameter Extraction of a Tensile-Strained Bulk Semiconductor Optical Amplifier

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