Correlation of photoconductivity response of amorphous In–Ga–Zn–O films with transistor performance using microwave photoconductivity decay method
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3561755
Reference18 articles.
1. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
3. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
4. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
5. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
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