Simulation of heavy ion irradiation effect on 3D MOSFET

Abstract

Single event upset effect is an important factor that causes performance degradation and functional failure of aerospace equipment components in space radiation environment. When high-energy particles incident on semiconductor devices in working state, they will induce functional errors of devices and even cause permanent damage. Based on the finite element method, the three-dimensional simulation of Metal-oxide-semiconductor field-effect transistor (MOSFET) is carried out. The single event upset effect of MOSFET under heavy ion irradiation and the influence of heavy ion irradiation on transient drain current are investigated. The results show that the transient drain current of MOSFET devices will increase rapidly when heavy ions are incident, and then the logic state of the devices will change. With the increase in linear energy transfer density, the peak value of the transient drain current pulse increases and the pulse width decreases. With the increase in the incident angle, the peak value of the pulse first increases and then decreases. The maximum value is obtained when the incident angle is vertical, the pulse width first decreases and then increases, and the minimum value is obtained when the incident angle is vertical. With the increase in MOSFET size, the difference of transient drain current formed by symmetrical heavy ion incidence is becoming smaller and smaller. When the incident track is completely in the drain region, the simulation results are the same.