Strain and plasmonic field induced modifications of material excitation response in monolayer MoS 2
Author:
Affiliation:
1. Department of Physics, Indian Institute of Technology Bombay, Mumbai 400 076, India
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5082314
Reference35 articles.
1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2. Atomically ThinMoS2: A New Direct-Gap Semiconductor
3. Few-Layer MoS2: A Promising Layered Semiconductor
4. Synthesis, properties, and optoelectronic applications of two-dimensional MoS2 and MoS2-based heterostructures
5. Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors
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