Fe3−xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor-Reference-Cited by-同舟云学术

Fe3−xZnxO4 thin film as tunable high Curie temperature ferromagnetic semiconductor

Published:2006-12-11 Issue:24 Volume:89 Page:242507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Takaobushi Junichi,Tanaka Hidekazu,Kawai Tomoji,Ueda Shigenori,Kim Jung-Jin,Kobata Masaaki,Ikenaga Eiji,Yabashi Makina,Kobayashi Keisuke,Nishino Yoshinori,Miwa Daigo,Tamasaku Kenji,Ishikawa Tetsuya

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2405389

Reference20 articles.

1. Fabrication and magnetoresistance of tunnel junctions using half-metallic Fe3O4

2. Fabrication and properties of heteroepitaxial magnetite (Fe3O4) tunnel junctions

3. Electrical-field control of metal–insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1−xBaxMnO3 field-effect transistor

4. Electric-field control of ferromagnetism

5. Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor

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