Investigation on the structural characterization of pulsed p-type porous silicon

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Wahab N. H. Abd,Rahim A. F. Abd,Mahmood A.,Yusof Y.

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Reference8 articles.

1. N. Naderi and M. R. Hashim, “Effect of Surface Morphology on Electrical Properties of Electrochemically-Etched Porous Silicon Photodetectors,” Int. J. Electrochem. Sci, vol. 7, pp. 11512–11518, 2012.

2. L. Pavesi and R. Guardini, “Porous silicon: silicon quantum dots for photonic applications,” Brazilian Journal of Physics, vol. 26, pp. 151–162, 1996.

3. Buda, F.; Kohanoff, J.; Parrinello, M., “Optical properties of porous silicon - A first-principles study,” vol. 69, pp. 1272–1275, 1992.

4. Experimental determination of the electrical band-gap energy of porous silicon and the band offsets at the porous silicon/crystalline silicon heterojunction

5. Silicon microcavity light emitting devices

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