Computer simulation of carrier transport in planar doped barrier diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93963
Reference4 articles.
1. Planar-doped barriers in GaAs by molecular beam epitaxy
2. Charge injection over triangular barriers in unipolar semiconductor structures
3. Onset of diffusion‐drift emission regime and the transition from exponential to linear current‐voltage characteristic of triangular barrier semiconductor structures
4. Diffusion of Hot and Cold Electrons in Semiconductor Barriers
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1. Hot electron effects on the operation of potential well barrier diodes;Journal of Semiconductors;2019-12-01
2. Energy oscillations in electron transport across a triangular barrier;IEEE Transactions on Electron Devices;1991-03
3. Hot‐electron properties of GaAs planar‐doped barrier diodes;Journal of Applied Physics;1989-11-15
4. Investigation on structure and optoelectronic properties of hydrogenated amorphous CSiGe:H alloys;Solid State Communications;1989-04
5. Iii–V Semiconductor Devices;Materials Processing: Theory and Practices;1989
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