Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337867
Reference17 articles.
1. High-performance interconnects: an integration overview
2. Si/Ge nanostructures
3. Electroluminescence of Ge/Si self-assembled quantum dots grown by chemical vapor deposition
4. Electroluminescence of self-assembled Ge hut clusters
5. Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots
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1. Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors;Nanotechnology;2021-05-10
2. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy;Nanotechnology;2019-12-23
3. Valence-band offsets in strained SiGeSn/Si layers with different tin contents;Semiconductors;2017-03
4. Semi-insulating GaAs and Au Schottky barrier photodetectors for near-infrared detection (1280 nm);SPIE Proceedings;2015-08-28
5. Optical properties of hybrid Si1−xGex/Si quantum dot/quantum well structures grown on Si by RPCVD;Materials Science in Semiconductor Processing;2014-01
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