Quantum well intermixing for the fabrication of InGaAsN/GaAs lasers with pulsed anodic oxidation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1651322
Reference26 articles.
1. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m
2. High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy
3. 1.32-μm GaInNAs-GaAs laser with a low threshold current density
4. MBE development of dilute nitrides for commercial long-wavelength laser applications
5. Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling the intermixing effects in highly strained asymmetric InGaAs/GaAs quantum well;Condensed Matter Physics;2015
2. Potential-Tailored Quantum Wells for High-Performance Optical Modulators/Switches;Nano- and Micromaterials;2008
3. Study of interdiffusion in GaInNAs∕GaAs quantum well structure emitting at 1.3μm by eight-band k∙p method;Journal of Applied Physics;2005-05-15
4. Thermal excitation effects of photoluminescence of annealed GaInNAs∕GaAs quantum-well laser structures grown by plasma-assisted molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
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