Electrical properties of Ta–Sn–O films on indium tin oxide electrodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118360
Reference12 articles.
1. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
2. Investigation on Leakage Current Reduction of Photo‐CVD Tantalum Oxide Films Accomplished by Active Oxygen Annealing
3. Ultrathin Tantalum Oxide Capacitor Dielectric Layers Fabricated Using Rapid Thermal Nitridation prior to Low Pressure Chemical Vapor Deposition
4. Thin-Film Electroluminescent Device Employing Ta2O5RF Sputtered Insulating Film
5. ZnS:Mn Thin Film Electroluminescent Devices Having Doubly-Stacked Insulating Layers
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1. Post annealing effects on the properties of sputtered nano-crystallite indium tin oxide thin films on flexible polyimide substrate;physica status solidi (c);2008-08
2. Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping;Applied Physics Letters;2007-03-12
3. Effect of sputtering pressure and annealing temperature on the properties of indium tin oxide thin films;Materials Science and Engineering: B;2007-01
4. Development of Dielectric Properties of Niobium Oxide, Tantalum Oxide, and Aluminum Oxide Based Nanolayered Materials;Journal of The Electrochemical Society;2001
5. Interference-induced blockage of direct tunneling current in metal–insulator–semiconductor structure;Applied Physics Letters;2000-05
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