Reduced backgating effect in modulation‐doped field‐effect transistors byp‐njunction isolation-Reference-Cited by-同舟云学术

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Reduced backgating effect in modulation‐doped field‐effect transistors byp‐njunction isolation

Published:1988-12-12 Issue:24 Volume:53 Page:2417-2419
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Patil M. B.,Mui D.,Kalem S.,Morkoç H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.100226

Reference7 articles.

1. Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

2. A 40-ps high electron mobility transistor 4.1 K gate array

3. Backgating in GaAs/(Al,Ga)As modulation‐doped field‐effect transistors and its reduction with a superlattice

4. Backgating in GaAs MESFET's

5. The dependence of AlGaAs/GaAs MODFET isolation on material and device structure

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical properties of GaAs on glass;Applied Physics A Materials Science & Processing;1996-03

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