Role of Ionization Inhomogeneities in the S‐Type Characteristic of Moderately Heavily Doped n‐GaAs-Reference-Cited by-同舟云学术

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Role of Ionization Inhomogeneities in the S‐Type Characteristic of Moderately Heavily Doped n‐GaAs

Published:1972-03 Issue:3 Volume:43 Page:1038-1041
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Southgate P. D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1661214

Reference12 articles.

1. Recombination Processes following Impact Ionization by High‐Field Domains in Gallium Arsenide

2. INFRARED AND MICROWAVE RADIATIONS ASSOCIATED WITH A CURRENT‐CONTROLLED INSTABILITY IN GaAs

3. The Influence of Boundary Conditions on Current Instabilities in GaAs

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ridley-Watkins-Hilsum-Gunn Effect;GaAs Devices and Circuits;1987

2. S-type current-voltage characteristic in Gunn diodes;Journal of Physics D: Applied Physics;1973-05-01

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