Radiation‐Induced Extrinsic Photoconductivity in Li‐Doped Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661218
Reference14 articles.
1. Interaction of Li and O with Radiation‐Produced Defects in Si
2. 1.8-, 3.3-, and 3.9-μ Bands in Irradiated Silicon: Correlations with the Divacancy
3. Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy Levels
4. Vibrational Spectra of Lithium-Oxygen and Lithium-Boron Complexes in Silicon
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron irradiation-induced defects in lithium doped n-type silicon with different oxygen concentrations;Physics Letters A;1988-05
2. Electron induced degradation and recovery under space conditions of lithium-doped silicon solar cells;Radiation Effects;1984-01
3. Study of lithium-boron pairs in neutron irradiated silicon;Radiation Effects;1976-01
4. Radiation Damage;Semiconducting Devices;1976
5. Optical study of lithium‐defect complexes in irradiated silicon;Journal of Applied Physics;1973-06
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