High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties-Reference-Cited by-同舟云学术

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High-pressure reactively sputtered HfO2: Composition, morphology, and optical properties

Published:2007-08-15 Issue:4 Volume:102 Page:044106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Toledano-Luque M.,San Andrés E.,del Prado A.,Mártil I.,Lucía M. L.,González-Díaz G.,Martínez F. L.,Bohne W.,Röhrich J.,Strub E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2769959

Reference37 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. Digest of Technical Papers of the 2003 Symposium on VLSI Technology;Oh S. H.,2003

3. Antireflection Coatings For Silicon Charge-Coupled Devices

4. A study of some optical properties of hafnium dioxide (HfO 2 ) thin films and their applications

5. International Semiconductor Conference 2006;Moldovan C.

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1. Modeling the influence of the duration of water vapor pulses on the properties of hafnium oxide synthesized by atomic layer deposition method;Vacuum;2024-11

2. 120 MeV Ag high energy irradiation effects in physical and chemical properties of ALD grown HfO2 thin films and their applications;Journal of Radioanalytical and Nuclear Chemistry;2024-08-21

3. First Demonstration of Yttria‐Stabilized Hafnia‐Based Long‐Retention Solid‐State Electrolyte‐Gated Transistor for Human‐Like Neuromorphic Computing;Small;2023-12-15

4. Effects of growth parameters on HfO₂ thin-films deposited by RF Magnetron sputtering;Radiation Effects and Defects in Solids;2022-02-01

5. Mid-infrared wavelength conversion using a composite Si3N4-HfO2 waveguide device;Integrated Optics: Devices, Materials, and Technologies XXV;2021-03-05

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