Improved performance of laterally oxidized GaInP/AlGaInP lasers by thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118900
Reference12 articles.
1. Native oxide top‐ and bottom‐confined narrow stripep‐nAlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser
2. Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide
3. Double injection and negative resistance in stripe‐geometry oxide‐aperture AlyGa1−yAs–GaAs–InxGa1−xAs quantum well heterostructure laser diodes
4. Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
5. Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics;Journal of Nanophotonics;2016-07-28
2. Red to green emitters from InGaP/InAlGaP laser structure by strain-induced quantum-well intermixing;Semiconductor Lasers and Laser Dynamics VII;2016-04-28
3. Improvement of InGaAs/GaAs vertical-cavity surface-emitting lasers by post-oxidation annealing;Chinese Optics Letters;2012
4. Linear and nonlinear optical properties ofInxGa1−xN/GaNheterostructures;Physical Review B;2000-03-15
5. High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wells;Applied Physics Letters;1998-03-30
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